IPB031NE7N3 G

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Overview of IPB031NE7N3 G

Part NumberIPB031NE7N3 G
ManufacturerInfineon Technologies
DescriptionN-CHANNEL POWER MOSFET
DatasheetsDownload IPB031NE7N3 G Datasheet PDFPDF Icon
Price for IPB031NE7N3 G

Specification of IPB031NE7N3 G

Status
Active
Series
OptiMOS™ 3
Package
Bulk
Supplier
Rochester Electronics, LLC
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
75 V
Current - Continuous Drain (Id) @ 25C
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
3.1mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
3.8V @ 155A
Gate Charge (Qg) (Max) @ Vgs
117 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
8130 pF @ 37.5 V
FET Feature
-
Power Dissipation (Max)
214W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO263-3-2
Package / Case
TO-263-3, DPak (2 Leads + Tab), TO-263AB

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